Effects of (NH4)2S passivation on the off-state performance of 3-dimensional InGaAs metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 99, Issue 15, 2011, Pages

  Gu, J J ^a   Neal, A T ^a   Ye, P D ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3-DIMENSIONAL; BARRIER LAYERS; DEEP SUB-MICRON; DEVICE STRUCTURES; ENHANCEMENT-MODE; GATE LENGTH; HIGH-SPEED; INTERFACE PASSIVATION; LOGIC APPLICATIONS; LOW POWER; METAL-OXIDE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SUBTHRESHOLD SWING;

DIELECTRIC DEVICES; HIGH ELECTRON MOBILITY TRANSISTORS; ION BEAMS; MOSFET DEVICES; OPTIMIZATION; PASSIVATION; SEMICONDUCTING INDIUM; THREE DIMENSIONAL;

TRANSISTORS;

EID: 80055019684     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3651754     Document Type: Article

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