Improved interfacial and electrical properties of GaAs metal-oxide- semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

Applied Physics Letters

Volumn 103, Issue 9, 2013, Pages

  Wang, L S ^a,b   Xu, J P ^a   Zhu, S Y ^a   Huang, Y ^a   Lai, P T ^c  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b WUHAN UNIVERSITY OF TECHNOLOGY   (China)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-EQUIVALENT THICKNESS; EQUIVALENT DIELECTRIC CONSTANT; GAAS METAL OXIDE SEMICONDUCTORS; GATE-LEAKAGE CURRENT; INTERFACE STATE DENSITY; INTERFACIAL PASSIVATION LAYERS; SEMICONDUCTOR CAPACITORS; STACKED GATE DIELECTRICS;

CAPACITORS; DIELECTRIC DEVICES; GALLIUM ARSENIDE; GATE DIELECTRICS; INTERFACE STATES; PASSIVATION; SEMICONDUCTING GALLIUM; TITANIUM OXIDES;

ELECTRIC PROPERTIES;

EID: 84884174243     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4818000     Document Type: Article

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