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Volumn 103, Issue 3, 2008, Pages

Characterization of sputtered TiO2 gate dielectric on aluminum oxynitride passivated p-GaAs

(6) Dalapati, Goutam Kumar a Sridhara, Aaditya a Wong, Andrew See Weng a Chia, Ching Kean a Lee, Sung Joo b Chi, Dongzhi a

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

b NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CURRENT VOLTAGE CHARACTERISTICS; GADOLINIUM COMPOUNDS; GATE DIELECTRICS; HEAT TREATMENT; PERMITTIVITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM OXYNITRIDE (ALON); INTERFACIAL OXIDE FORMATION; TRAPPING BEHAVIOR;

TITANIUM OXIDES;

EID: 39349083346 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2840132 Document Type: Article

Times cited : (39)

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