Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2 Ga0.8 As and deposition of ultrathin Al2 O3 gate insulators

Applied Physics Letters

Volumn 93, Issue 5, 2008, Pages

  Shin, Byungha ^a   Choi, Donghun ^a   Harris, James S ^a   McIntyre, Paul C ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CAPACITANCE; CHEMICAL CLEANING; ELECTROLYTIC CAPACITORS; HYDROCHLORIC ACID; MOS CAPACITORS; OZONE WATER TREATMENT; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; PLATINUM; SURFACE CHEMISTRY; THERMAL DESORPTION;

ATOMIC LAYERS; ATOMIC-LAYER DEPOSITIONS; CHEMICAL PASSIVATIONS; GATE INSULATORS; IN-SITU; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; NATIVE OXIDES; OXIDE THICKNESS; PHOTOELECTRON SPECTRUM; PT ELECTRODES; SURFACE PREPARATIONS;

SURFACE CLEANING;

EID: 51849098136     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2966357     Document Type: Article

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