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Volumn 97, Issue 6, 2010, Pages

HfO2 -GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer

(4) He, G a,b Zhang, L D b Liu, M b Sun, Z Q a

a ANHUI UNIVERSITY (China)

b INSTITUTE OF SOLID STATE PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXYNITRIDE; CAPACITANCE VOLTAGE CHARACTERISTIC; CONDUCTION BAND OFFSET; FERMI LEVEL PINNING; FERMI-LEVEL UNPINNING; GAAS; GAAS SURFACES; INTERFACE STATE DENSITY; INTERFACIAL PASSIVATION LAYERS; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; PASSIVATION LAYER;

CAPACITANCE; CAPACITORS; ELECTRON MOBILITY; FERMI LEVEL; GALLIUM ALLOYS; GALLIUM ARSENIDE; HAFNIUM COMPOUNDS; HETEROJUNCTIONS; LEAD OXIDE; MOS CAPACITORS; NITRIDES; PASSIVATION; SEMICONDUCTING GALLIUM;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77955754332 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3475015 Document Type: Article

Times cited : (32)

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