Erratum: Tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition (ACS Applied Materials and Interfaces (2014) 6 (10482-10488) DOI:10.1021/am502048d);Tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition

ACS Applied Materials and Interfaces

Volumn 6, Issue 13, 2014, Pages 10482-10488

  Byun, Young Chul ^a   Choi, Sungho ^a   An, Youngseo ^a   McIntyre, Paul C ^b   Kim, Hyoungsub ^a  

^a Sungkyunkwan University   (South Korea)

^b Stanford University   (United States)

Author keywords

atomic layer deposition; electrical property; GaAs; surface passivation; ZnO

Indexed keywords

ATOMS; ELECTRIC PROPERTIES; ENERGY GAP; GALLIUM ARSENIDE; GATE DIELECTRICS; HAFNIUM OXIDES; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; INTERFACE STATES; INTERFACES (MATERIALS); PASSIVATION; SEMICONDUCTING GALLIUM; SUBSTRATES; ZINC OXIDE;

ELECTRICAL ANALYSIS; GAAS; HFO2 GATE DIELECTRICS; INTERFACE QUALITY; INTERFACE TRAPS; PASSIVATED SURFACE; SURFACE PASSIVATION; VALENCE BAND EDGES;

ATOMIC LAYER DEPOSITION;

EID: 84904105242     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b02372     Document Type: Erratum

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