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Applied Physics Letters

Volumn 101, Issue 25, 2012, Pages

Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond

(4) Liu, J W a Liao, M Y a Imura, M a Koide, Y a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; BAND OFFSETS; CONDUCTION BAND OFFSET; ELECTRONIC BAND STRUCTURE; ENERGY-LOSS SPECTRUM; HIGH-K OXIDES; HYDROGENATED DIAMOND; SINGLE-CRYSTALLINE; VALENCE BAND OFFSETS; VALENCE-BAND MAXIMUMS;

ALUMINUM; ATOMIC LAYER DEPOSITION; BINDING ENERGY; DEPOSITS; ENERGY DISSIPATION; HAFNIUM OXIDES; HETEROJUNCTIONS; HYDROGENATION; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

DIAMONDS;

EID: 84871744665 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4772985 Document Type: Article

Times cited : (93)

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