Composition dependence of interface control and optimization on the performance of an HfTiON gate dielectric metal-oxide-semiconductor capacitor

Semiconductor Science and Technology

Volumn 26, Issue 10, 2011, Pages

  He, G ^a   Sun, Z Q ^a   Ma, Y Q ^a   Wu, M Z ^a   Liu, Y M ^a   Shi, S W ^a   Li, G ^a   Chen, X S ^b   Zhang, L D ^c   Fang, Z B ^d  

^a ANHUI UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c INSTITUTE OF SOLID STATE PHYSICS   (China)

^d SHAOXING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC BANDS; BAND ALIGNMENTS; BARRIER HEIGHTS; C-V CHARACTERISTIC; COMPOSITION DEPENDENCE; COMPOSITION RATIO; ELECTRICAL MEASUREMENT; HIGH-K DIELECTRIC; IN-BAND; INTERFACE CONTROL; INTERFACIAL LAYER; METAL-OXIDE-SEMICONDUCTOR CAPACITORS;

ALIGNMENT; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; GATE DIELECTRICS; HAFNIUM; MOS CAPACITORS; OPTIMIZATION; SEMICONDUCTING SILICON; SILICATES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 80053355602     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/10/105019     Document Type: Article

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