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Applied Physics Letters

Volumn 95, Issue 11, 2009, Pages

Thermal nitridation passivation dependent band offset and electrical properties of AlOx Ny /GaAs gate stacks

(3) He, G a Zhang, L D a Liu, M a

a INSTITUTE OF SOLID STATE PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; CONDUCTION BAND OFFSET; CONDUCTION-BAND MINIMUM; ELECTRICAL PROPERTY; FERMI LEVEL PINNING; GAAS; GAAS SURFACES; GATE STACKS; GATE-LEAKAGE CURRENT; INTERFACE PINNING; METAL OXIDE SEMICONDUCTOR; THERMAL NITRIDATION;

CONDUCTION BANDS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; FERMI LEVEL; FERMIONS; GALLIUM ALLOYS; HETEROJUNCTIONS; LEAKAGE CURRENTS; NITRIDATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES;

PASSIVATION;

EID: 70349485238 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3229922 Document Type: Article

Times cited : (18)

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