Effects of nitrogen incorporation in HfO2 grown on InP by atomic layer deposition: An evolution in structural, chemical, and electrical characteristics

ACS Applied Materials and Interfaces

Volumn 6, Issue 6, 2014, Pages 3896-3906

  Kang, Yu Seon ^a   Kim, Dae Kyoung ^a   Kang, Hang Kyu ^a   Jeong, Kwang Sik ^a   Cho, Mann Ho ^a   Ko, Dae Hong ^a   Kim, Hyoungsub ^b   Seo, Jung Hye ^c   Kim, Dong Chan ^d  

^a Yonsei University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Korea Basic Science Institute (KBSI)   (South Korea)

^d SAMSUNG Electronics   (South Korea)

Author keywords

band alignment; indium phosphide; nitridation; thin films

Indexed keywords

AMORPHOUS FILMS; ATOMIC LAYER DEPOSITION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL IMPURITIES; DEPOSITION; FILM THICKNESS; INDIUM PHOSPHIDE; INTERFACES (MATERIALS); NITRIDATION; NITROGEN; THIN FILMS; VAPORS;

BAND ALIGNMENTS; ELECTRICAL CHARACTERISTIC; INTERFACIAL DEFECT; INTERFACIAL STRAIN; NITROGEN INCORPORATION; POST DEPOSITION ANNEALING; STRUCTURAL CHARACTERISTICS; TETRAGONAL STRUCTURE;

HAFNIUM OXIDES;

EID: 84896983829     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am4049496     Document Type: Article

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