Silicon interfacial passivation layer chemistry for high-k /InP interfaces

ACS Applied Materials and Interfaces

Volumn 6, Issue 10, 2014, Pages 7340-7345

  Dong, Hong ^a   Cabrera, Wilfredo ^a   Qin, Xiaoye ^a   Brennan, Barry ^a   Zhernokletov, Dmitry ^b,c   Hinkle, Christopher L ^a   Kim, Jiyoung ^a   Chabal, Yves J ^a   Wallace, Robert M ^a,b  

^a The University of Texas at Dallas   (United States)

^b UNIVERSITY OF TEXAS AT DALLAS   (United States)

^c Stanford University   (United States)

Author keywords

atomic layer deposition; diffusion; high k; indium phosphide; silicon interfacial passivation layer

Indexed keywords

ALUMINUM; ATOMIC LAYER DEPOSITION; DEPOSITION; DIELECTRIC MATERIALS; DIFFUSION; INDIUM; INDIUM PHOSPHIDE; SILICATES; THERMODYNAMIC STABILITY;

ALUMINUM SILICATES; HAFNIUM SILICATES; HIGH-K; HIGH-K DIELECTRIC; IN-SITU ANNEALING; INTERFACIAL PASSIVATION LAYERS; PHOSPHORUS OXIDE; VOLATILE SPECIES;

SILICON;

EID: 84901659325     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am500752u     Document Type: Article

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