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Applied Physics Letters

Volumn 94, Issue 7, 2009, Pages

HfOxNy gate dielectric on p-GaAs

(5) Dalapati, G K a Sridhara, A a Wong, A S W a Chia, C K a Chi, D Z a

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; GALLIUM ALLOYS; GATE DIELECTRICS; GATES (TRANSISTOR); NITRIDES; OXIDE FILMS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE;

AS INTERFACES; DEVICE CHARACTERISTICS; EQUIVALENT OXIDE THICKNESS; GAAS; INTERFACIAL LAYERS; LEAKAGE CURRENT DENSITIES; METAL-OXIDE SEMICONDUCTORS; NITROGEN INCORPORATIONS; OUT DIFFUSIONS; PLASMA NITRIDATION; POST-THERMAL ANNEALING;

HAFNIUM COMPOUNDS;

EID: 60749136099 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3079409 Document Type: Article

Times cited : (40)

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