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Volumn 91, Issue 14, 2007, Pages

Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited Hf O2 Al2 O3 nanolaminate gate dielectric

(11) Yang, T a Xuan, Y a Zemlyanov, D a Shen, T a Wu, Y Q a Woodall, J M a Ye, P D a Aguirre Tostado, F S b Milojevic, M b Mcdonnell, S b Wallace, R M b

a PURDUE UNIVERSITY (United States)

b The University of Texas at Dallas (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCY DISPERSION; METAL-OXIDE-SEMICONDUCTOR (MOS) STRUCTURES; NANOLAMINATE GATE DIELECTRICS;

ATOMIC LAYER DEPOSITION; ELECTRON TRAPS; ELECTRONIC STRUCTURE; GATE DIELECTRICS; PERMITTIVITY; SEMICONDUCTING GALLIUM ARSENIDE;

SEMICONDUCTOR MATERIALS;

EID: 34948821305 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2798499 Document Type: Article

Times cited : (59)

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