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Volumn 95, Issue 3, 2009, Pages

Improved thermal stability, interface, and electrical properties of HfO2 films prepared by pulsed laser deposition using in situ ionized nitrogen

(7) Wang, Yi a Wang, Hao a Zhang, Jun a Wang, Hanbin a Ye, Cong a Jiang, Yong b Wang, Qing c

a HUBEI UNIVERSITY (China)

b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING (China)

c UNIVERSITY OF SOUTH EASTERN NORWAY (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; ELECTRICAL PROPERTY; ELECTRICAL STUDIES; IN-SITU; INTERFACIAL MICROSTRUCTURE; IONIZED NITROGEN; LOW-LEAKAGE CURRENT; SCHOTTKY EMISSIONS; SUBSTRATE INJECTION; THERMAL STABILITY; TRAP ASSISTED TUNNELING;

ELECTRIC FIELDS; ELECTRIC NETWORK ANALYSIS; ELECTRIC PROPERTIES; ELECTRON ENERGY LOSS SPECTROSCOPY; HAFNIUM COMPOUNDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NITROGEN; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; THERMODYNAMIC STABILITY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67651247333 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3184577 Document Type: Article

Times cited : (24)

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