Band gap and band discontinuities at crystalline Pr2O 3/Si (001) heterojunctions

Applied Physics Letters

Volumn 80, Issue 2, 2002, Pages 297-299

  Osten, H J ^a   Liu, J P ^a   Mussig H J ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; BAND DISCONTINUITIES; BAND OFFSETS; CONDUCTION BAND OFFSET; ELECTRON MASS; HIGH FIELD; LOW-LEAKAGE CURRENT; MONOLAYER COVERAGE; P-TYPE; PSEUDOPOTENTIAL CALCULATION; SCANNING TUNNELING SPECTROSCOPY; SI(0 0 1); SURFACE STATE BANDS; VALENCE BAND OFFSETS;

ALIGNMENT; ENERGY GAP; HETEROJUNCTIONS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; MONOLAYERS; SCANNING TUNNELING MICROSCOPY; SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON;

EID: 79956020216     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1433909     Document Type: Article

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