Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

Thin Solid Films

Volumn 517, Issue 9, 2009, Pages 2892-2895

  Xu, J P ^a   Zou, X ^b   Lai, P T ^c   Li, C X ^c   Chan, C L ^c  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b JIANGHAN UNIVERSITY   (China)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Anneal; Capacitors; Ge metal oxide semiconductor; HfTiO; High gate dielectrics; Interlayer; Transmission electron microscopy

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; GATES (TRANSISTOR); GERMANIUM; GROWTH (MATERIALS); MOS CAPACITORS; PERMITTIVITY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; WATER VAPOR;

ANNEAL; CAPACITANCE-EQUIVALENT THICKNESS; DIELECTRIC PERFORMANCE; GATE-LEAKAGE CURRENTS; GE METAL-OXIDE-SEMICONDUCTOR; HFTIO; INTERFACE STATE; INTERFACE-STATE DENSITIES; INTERLAYER; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; OXIDE CHARGES; RELATIVE PERMITTIVITIES;

GATE DIELECTRICS;

EID: 60249093732     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.10.115     Document Type: Article

References (16)

1. Mandal S.K., Charkraborty S., and Maiti C.K. Microelectron. Eng. 81 (2005) 206
2. Dimoulas A., Mavrou G., Velliantis G., Evangelou E., Boukos N., Houssa M., and Caymax M. Appl. Phys. Lett. 86 (2005) 032908
3. Ritenour A., Khakifirooz A., Antoniadis D.A., lei R.Z., Tsai W., Dimoulas A., Mavrou G., and Panayiotatos Y. Appl. Phys. Lett. 88 (2006) 132107
4. Gao F., Lee S.J., Pan J.S., Tang L.J., and Kwong D.-L. Appl. Phys. Lett. 86 (2005) 113501
5. Chui C.O., Ito F., and Saraswat K.C. IEEE Electron Device Lett. 25 (2004) 613
6. Maeda T., Yasuda T., Nishizawa M., Miyata N., Morita Y., and Takagi S. Appl. Phys. Lett. 85 (2004) 3181
7. Chen F., Bin X., Hella C., Shi X., Gladfelter W.L., and Campbell S.A. Microelectron. Eng. 72 (2004) 263
8. Lee C., Ghosez P., and Gonze X. Phys. Rev., B 65 (1994) 13379
9. Li M., Zhang Z., Campbell S.A., Gladfelter W.L., Agustin M.P., Klenov D.O., and Stemmer S. J. Appl. Phys. 98 (2005) 054506
10. Xu J.P., Lai P.T., Li C.X., Zou X., and Chan C.L. IEEE Electron Device Lett. 27 (2006) 439
11. Kim H., Mclntyre P.C., Chui C.O., Saraswat K.C., and Cho M.-H. Appl. Phys. Lett. 85 (2004) 2902
12. Hori T., Iwasaski H., Naito Y., and Esaki H. IEEE Trans. Electron Devices 34 (1987) 2238
13. Bhat M., Kim J., Yan J., Yoon G.W., Han L.K., and Kwong D.L. IEEE Electron Device Lett. 15 (1994) 421
14. Terman L.M. Solid-State Electron. 5 (1962) 285
15. Lu N., Bai W., Ramirez A., Mouli C., Ritenour A., Lee M.L., Antoniadis D., and Kwong D.L. Appl. Phys. Lett. 87 (2005) 051922
16. Mikhelashvili V., and Eisenstein G. Thin Solid Films 515 7-8 (2007) 3704