SCOPUS 정보 검색 플랫폼

Volumn 93, Issue 19, 2008, Pages

Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate

(8) Kim, C Y a Cho, S W a Cho, M H a Chung, K B b An, C H c Kim, H c Lee, H J c Ko, D H a

a Yonsei University (South Korea)

b NORTH CAROLINA STATE UNIVERSITY (United States)

c Sungkyunkwan University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; ATOMIC PHYSICS; ATOMIC SPECTROSCOPY; ATOMS; ELECTRIC CURRENT MEASUREMENT; HAFNIUM COMPOUNDS; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; PHOTOELECTRON SPECTROSCOPY; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING TEMPERATURES; ATOMIC LAYERS; CRYSTALLINE FILMS; ELECTRON TRANSMISSION MICROSCOPIES; GAAS SUBSTRATES; GAAS(100); HIGH RESOLUTIONS; INTERFACIAL CHARACTERISTICS; INTERFACIAL LAYERS; INTERFACIAL REACTIONS; POLYCRYSTAL LINES; STOICHIOMETRIC CHANGES; SURFACE STATES; VALENCE BAND OFFSETS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

GALLIUM ALLOYS;

EID: 56249143080 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2996261 Document Type: Article

Times cited : (24)

References (11)

1
- 12144286164
- M.-H. Cho, H. S. Chang, D. W. Moon, S. K. Kang, B. K. Min, D.-H. Ko, H. S. Kim, and P. C. McIntyre, Appl. Phys. Lett. 84, 1171 (2004).
- (2004) Appl. Phys. Lett. , vol.84 , pp. 1171
- Cho, M.-H.¹ Chang, H.S.² Moon, D.W.³ Kang, S.K.⁴ Min, B.K.⁵ Ko, D.-H.⁶ Kim, H.S.⁷ McIntyre, P.C.⁸

2
- 33751098232
- M. Perego, G. Seguini, and M. Fanciulli, J. Appl. Phys. 100, 093718 (2006).
- (2006) J. Appl. Phys. , vol.100 , pp. 093718
- Perego, M.¹ Seguini, G.² Fanciulli, M.³

3
- 36049033671
- G. Seguini, M. Perego, S. Spoga, A. Dimoulas, and M. Fanciulli, Appl. Phys. Lett. 91, 192902 (2007).
- (2007) Appl. Phys. Lett. , vol.91 , pp. 192902
- Seguini, G.¹ Perego, M.² Spoga, S.³ Dimoulas, A.⁴ Fanciulli, M.⁵

4
- 31044455312
- J. Robertson, Rep. Prog. Phys. 69, 327 (2006).
- (2006) Rep. Prog. Phys. , vol.69 , pp. 327
- Robertson, J.¹

5
- 0000516822
- G. Hollinger, R. Skheyta-Kabbani, and M. Gendry, Phys. Rev. B 49, 11159 (1994).
- (1994) Phys. Rev. B , vol.49 , pp. 11159
- Hollinger, G.¹ Skheyta-Kabbani, R.² Gendry, M.³

6
- 39749157907
- C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, and R. M. Wallace, Appl. Phys. Lett. 92, 071901 (2008).
- (2008) Appl. Phys. Lett. , vol.92 , pp. 071901
- Hinkle, C.L.¹ Sonnet, A.M.² Vogel, E.M.³ McDonnell, S.⁴ Hughes, G.J.⁵ Milojevic, M.⁶ Lee, B.⁷ Aguirre-Tostado, F.S.⁸ Choi, K.J.⁹ Kim, H.C.¹⁰ Kim, J.¹¹ Wallace, R.M.¹²

7
- 17444370904
- J. Ivanco, T. Kubota, and H. Kobyashi, J. Appl. Phys. 97, 073712 (2005).
- (2005) J. Appl. Phys. , vol.97 , pp. 073712
- Ivanco, J.¹ Kubota, T.² Kobyashi, H.³

8
- 0034318445
- P. Kruse, J. G. McLean, and A. Kummel, J. Chem. Phys. 113, 9217 (2000).
- (2000) J. Chem. Phys. , vol.113 , pp. 9217
- Kruse, P.¹ McLean, J.G.² Kummel, A.³

9
- 0001204169
- H. Kobayashi, K. Namba, T. Mori, and Y. Nakato, Phys. Rev. B 52, 5781 (1995).
- (1995) Phys. Rev. B , vol.52 , pp. 5781
- Kobayashi, H.¹ Namba, K.² Mori, T.³ Nakato, Y.⁴

10
- 21044444062
- S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Yamashita, M. Niwa, K. Usuda, and G. L. Liu, J. Appl. Phys. 97, 104507 (2005).
- (2005) J. Appl. Phys. , vol.97 , pp. 104507
- Toyoda, S.¹ Okabayashi, J.² Kumigashira, H.³ Oshima, M.⁴ Yamashita, K.⁵ Niwa, M.⁶ Usuda, K.⁷ Liu, G.L.⁸

11
- 33746281113
- J. Robertson and B. Falabretti, J. Appl. Phys. 100, 014111 (2006).
- (2006) J. Appl. Phys. , vol.100 , pp. 014111
- Robertson, J.¹ Falabretti, B.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.