Hydrogen-related leakage currents induced in ultrathin SiO2/Si structures by vacuum ultraviolet radiation

Journal of the Electrochemical Society

Volumn 146, Issue 9, 1999, Pages 3409-3414

  Afanas'ev, V V ^a   Stesmans, A ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DIELECTRIC PROPERTIES; HYDROGEN BONDS; LEAKAGE CURRENTS; PHOTONS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON WAFERS; STRESS ANALYSIS; ULTRAVIOLET RADIATION; VACUUM APPLICATIONS;

ELECTRICAL STRESS;

SEMICONDUCTING FILMS;

EID: 0033359773     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1392487     Document Type: Article

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