Thermally induced interface degradation in (100) and (111) Si/SiO2 analyzed by electron spin resonance

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 6, 1998, Pages 3108-3111

  Stesmans, A ^a   Afanas'ev, V V ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001218452     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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