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Volumn 66, Issue 16, 2002, Pages 1653201-1653209

Frequency-dependent electron spin resonance study of Pb-type interface defects in thermal Si/SiO2

Author keywords

[No Author keywords available]

Indexed keywords

SILICON; SILICON DIOXIDE;

EID: 0037110086     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (24)

References (32)
  • 14
    • 0022863005 scopus 로고
    • edited by J. J. Simone and J. Buxo (North-Holland, Amsterdam)
    • A. Stesmans and J. Braet, in Insulating Films on Semiconductors, edited by J. J. Simone and J. Buxo (North-Holland, Amsterdam, 1986), p. 25.
    • (1986) Insulating Films on Semiconductors , pp. 25
    • Stesmans, A.1    Braet, J.2
  • 27
    • 33646607015 scopus 로고    scopus 로고
    • note
    • Probably, a more correct term here woud be just "structural relaxation".
  • 28
    • 33646603874 scopus 로고    scopus 로고
    • note
    • ox=970 °C (i.e., the highest process temperature underwent).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.