A generalized reaction-diffusion model with explicit H-H2 dynamics for negative-bias temperature-instability (NBTI) degradation

IEEE Transactions on Electron Devices

Volumn 54, Issue 5, 2007, Pages 1101-1107

  Küflüog̃lu, Haldum ^a   Alam, Muhammad Ashraful ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Hydrogen; MOSFET; Negative bias temperature instability (NBTI); Reliability; Saturation; Time dependence

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; HYDROGEN; MOLECULAR DYNAMICS; MOSFET DEVICES; RELIABILITY; SATURATION (MATERIALS COMPOSITION);

NEGATIVE-BIAS TEMPERATURE-INSTABILITY; REACTION-DIFFUSION;

MAGNETOELECTRONICS;

EID: 34247846349     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.893809     Document Type: Article

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