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Volumn 15, Issue 5, 2000, Pages 436-444

Reliability: A possible showstopper for oxide thickness scaling?

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; OXIDES; RELIABILITY; ULTRATHIN FILMS;

EID: 0033752184     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/5/302     Document Type: Article
Times cited : (86)

References (22)
  • 1
    • 0032266438 scopus 로고    scopus 로고
    • Structural dependence of dielectric breakdown in ultra-thin gate oxides and its relationship to soft breakdown modes and device failure
    • Wu E, Nowak E, Aitken J, Abadeer W, Han L K and Lo S 1998 Structural dependence of dielectric breakdown in ultra-thin gate oxides and its relationship to soft breakdown modes and device failure IEDM Tech. Dig. pp 187-90
    • (1998) IEDM Tech. Dig. , pp. 187-190
    • Wu, E.1    Nowak, E.2    Aitken, J.3    Abadeer, W.4    Han, L.K.5    Lo, S.6
  • 3
    • 84886448127 scopus 로고    scopus 로고
    • Ultra-thin gate dielectrics: They break down, but do they fail?
    • Weir B et al 1997 Ultra-thin gate dielectrics: they break down, but do they fail? IEDM Tech. Dig. pp 73-6
    • (1997) IEDM Tech. Dig. , pp. 73-76
    • Weir, B.1
  • 4
    • 0032204912 scopus 로고    scopus 로고
    • On the properties of the gate and substrate current after soft breakdown in ultra-thin oxide layers
    • Crupi F, Degraeve R, Groeseneken G, Nigam T and Maes H E 1998 On the properties of the gate and substrate current after soft breakdown in ultra-thin oxide layers IEEE Trans. Electron. Devices 45 2329-34
    • (1998) IEEE Trans. Electron. Devices , vol.45 , pp. 2329-2334
    • Crupi, F.1    Degraeve, R.2    Groeseneken, G.3    Nigam, T.4    Maes, H.E.5
  • 5
    • 0033342074 scopus 로고    scopus 로고
    • Explanation of soft and hard breakdown and its consequences for area scaling
    • Alam M A, Weir B, Bude J, Silverman P and Monroe D 1999 Explanation of soft and hard breakdown and its consequences for area scaling IEDM Tech. Dig. pp 449-52
    • (1999) IEDM Tech. Dig. , pp. 449-452
    • Alam, M.A.1    Weir, B.2    Bude, J.3    Silverman, P.4    Monroe, D.5
  • 7
    • 0000863885 scopus 로고    scopus 로고
    • Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures
    • DiMaria D J and Stathis j H 1997 Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures Appl. Phys. Lett. 70 2708-10
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 2708-2710
    • DiMaria, D.J.1    Stathis, J.H.2
  • 8
    • 0033280626 scopus 로고    scopus 로고
    • A concept of gate oxide lifetime limited by 'B-mode' stress induced leakage currents in direct tunnelling regime
    • Okada K, Kubo H, Ishinaga A and Yoneda K 1999 A concept of gate oxide lifetime limited by 'B-mode' stress induced leakage currents in direct tunnelling regime Symp. on VLSI Tech. Dig. Tech. Papers pp 57-8
    • (1999) Symp. on VLSI Tech. Dig. Tech. Papers , pp. 57-58
    • Okada, K.1    Kubo, H.2    Ishinaga, A.3    Yoneda, K.4
  • 13
    • 0031653670 scopus 로고    scopus 로고
    • Constant current charge-to-breakdown: Still a valid tool to study the reliability of MOS structures?
    • Nigam T, Degraeve R, Groeseneken G, Heyns M M and Maes H E 1998 Constant current charge-to-breakdown: still a valid tool to study the reliability of MOS structures? Proc. IRPS pp 62-9
    • (1998) Proc. IRPS , pp. 62-69
    • Nigam, T.1    Degraeve, R.2    Groeseneken, G.3    Heyns, M.M.4    Maes, H.E.5
  • 14
    • 0032646374 scopus 로고    scopus 로고
    • A fast and simple methodology for lifetime prediction of ultra-thin oxides
    • Nigam T, Degraeve R, Groeseneken G, Heyns M M and Maes H E 1999 A fast and simple methodology for lifetime prediction of ultra-thin oxides Proc. IRPS pp 381-8
    • (1999) Proc. IRPS , pp. 381-388
    • Nigam, T.1    Degraeve, R.2    Groeseneken, G.3    Heyns, M.M.4    Maes, H.E.5
  • 16
    • 0342862710 scopus 로고    scopus 로고
    • An experimental evidence to link the origins of 'A-mode' and 'B mode' stress induced leakage current
    • Okada K 1997 An experimental evidence to link the origins of 'A-mode' and 'B mode' stress induced leakage current Extended Abstracts 1997 Int. Conf. on SSDM pp 92-3
    • (1997) Extended Abstracts 1997 Int. Conf. on SSDM , pp. 92-93
    • Okada, K.1
  • 17
    • 0032275853 scopus 로고    scopus 로고
    • Reliability projection for ultra-thin oxides at low voltage
    • Stathis J H and DiMaria D J 1998 Reliability projection for ultra-thin oxides at low voltage IEDM Tech. Dig. pp 167-70
    • (1998) IEDM Tech. Dig. , pp. 167-170
    • Stathis, J.H.1    DiMaria, D.J.2
  • 18
    • 84907889642 scopus 로고    scopus 로고
    • The effect of elevated temperature on the reliability of very thin oxide films
    • Kaczer B, Degraeve R, Pangon N, Nigam T and Groeseneken G 1999 The effect of elevated temperature on the reliability of very thin oxide films Proc. ESSDERC pp 356-9
    • (1999) Proc. ESSDERC , pp. 356-359
    • Kaczer, B.1    Degraeve, R.2    Pangon, N.3    Nigam, T.4    Groeseneken, G.5
  • 20
    • 0033343947 scopus 로고    scopus 로고
    • Gate oxides in 50 nm devices: Thickness uniformity improves projected reliability
    • Weir B E et al 1999 Gate oxides in 50 nm devices: thickness uniformity improves projected reliability IEDM Tech. Dig. pp 437-40
    • (1999) IEDM Tech. Dig. , pp. 437-440
    • Weir, B.E.1
  • 21
    • 0027811720 scopus 로고
    • Silicon dioxide breakdown lifetime enhancement under bipolar bias conditions
    • Rosenbaum E, Liu Z and Hu C 1993 Silicon dioxide breakdown lifetime enhancement under bipolar bias conditions Trans. Electron Devices 40 2287-95
    • (1993) Trans. Electron Devices , vol.40 , pp. 2287-2295
    • Rosenbaum, E.1    Liu, Z.2    Hu, C.3
  • 22
    • 0034225988 scopus 로고    scopus 로고
    • The influence of elevated temperature on degradation and lifetime prediction of thin silicon-dioxide films
    • at press
    • Kaczer B, Degraeve R, Pangon N and Groeseneken G The influence of elevated temperature on degradation and lifetime prediction of thin silicon-dioxide films IEEE Trans. Electron Devices at press
    • IEEE Trans. Electron Devices
    • Kaczer, B.1    Degraeve, R.2    Pangon, N.3    Groeseneken, G.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.