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Applied Physics Letters

Volumn 95, Issue 16, 2009, Pages

First-principles study of the electronic properties of Ge dangling bonds at (100) Si1-x Gex / SiO2 interfaces

(6) Houssa, M a Afanas'Ev, V V a Stesmans, A a Pourtois, G b Meuris, M b Heyns, M M b,c

a KU LEUVEN (Belgium)

b IMEC (Belgium)

c UNIVERSITY OF LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT LEVELS; ENERGY BANDGAPS; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; SI CONCENTRATION; VALENCE BAND EDGES;

ELECTRONIC PROPERTIES; GERMANIUM; SILICON ALLOYS; SILICON COMPOUNDS;

DANGLING BONDS;

EID: 70350430219 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3253707 Document Type: Article

Times cited : (10)

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