SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Journal of Applied Physics

Volumn 89, Issue 9, 2001, Pages 5015-5024

Anode hole injection, defect generation, and breakdown in ultrathin silicon dioxide films

(2) DiMaria, D J a Stathis, J H a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035339636 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1363680 Document Type: Article

Times cited : (113)

References (37)

1
- 0018062167
- edited by S. T. Pantelides Pergamon, New York, and references therein
- 2 and its Interfaces, edited by S. T. Pantelides (Pergamon, New York, 1978), pp. 160-178, and references therein.
- (1978) 2 and Its Interfaces , pp. 160-178
- DiMaria, D.J.¹

2
- 0020751109
- S. K. Lai, J. Appl. Phys. 54, 2540 (1983).
- (1983) J. Appl. Phys. , vol.54 , pp. 2540
- Lai, S.K.¹

3
- 0022013081
- D. J. DiMaria, T. N. Theis, J. R. Kirtley, F. L. Pesavento, D. W. Dong, and S. D. Brorson, J. Appl. Phys. 57, 1214 (1985).
- (1985) J. Appl. Phys. , vol.57 , pp. 1214
- DiMaria, D.J.¹ Theis, T.N.² Kirtley, J.R.³ Pesavento, F.L.⁴ Dong, D.W.⁵ Brorson, S.D.⁶

4
- 36549102659
- I. C. Chen, S. Holland, K. K. Young, C. Chang, and C. Hu, Appl. Phys. Lett. 49, 669 (1986).
- (1986) Appl. Phys. Lett. , vol.49 , pp. 669
- Chen, I.C.¹ Holland, S.² Young, K.K.³ Chang, C.⁴ Hu, C.⁵

5
- 0001193103
- A. V. Schwerin, M. M. Heyns, and W. Weber, J. Appl. Phys. 67, 7595 (1990).
- (1990) J. Appl. Phys. , vol.67 , pp. 7595
- Schwerin, A.V.¹ Heyns, M.M.² Weber, W.³

6
- 0000143442
- D. J. DiMaria, D. Arnold, and E. Cartier, Appl. Phys. Lett. 61, 2329 (1992).
- (1992) Appl. Phys. Lett. , vol.61 , pp. 2329
- DiMaria, D.J.¹ Arnold, D.² Cartier, E.³

7
- 21544458715
- D. J. DiMaria, E. Cartier, and D. Arnold, J. Appl. Phys. 73, 3367 (1993).
- (1993) J. Appl. Phys. , vol.73 , pp. 3367
- DiMaria, D.J.¹ Cartier, E.² Arnold, D.³

8
- 0000005052
- G. Van den bosch, G. Groeseneken, H. E. Maes, R. B. Klein, and N. S. Saks, J. Appl. Phys. 75, 2073 (1994).
- (1994) J. Appl. Phys. , vol.75 , pp. 2073
- Van Den Bosch, G.¹ Groeseneken, G.² Maes, H.E.³ Klein, R.B.⁴ Saks, N.S.⁵

9
- 0028430427
- K. F. Schuegraf and C. Hu, IEEE Trans. Electron Devices 41, 761 (1994).
- (1994) IEEE Trans. Electron Devices , vol.41 , pp. 761
- Schuegraf, K.F.¹ Hu, C.²

10
- 0029307414
- D. J. DiMaria, IEEE Electron Device Lett. 16, 184 (1995).
- (1995) IEEE Electron Device Lett. , vol.16 , pp. 184
- DiMaria, D.J.¹

11
- 0012717733
- D. J. DiMaria, D. A. Buchanan, J. H. Stathis, and R. E. Stahlbush, J. Appl. Phys. 77, 2032 (1995).
- (1995) J. Appl. Phys. , vol.77 , pp. 2032
- DiMaria, D.J.¹ Buchanan, D.A.² Stathis, J.H.³ Stahlbush, R.E.⁴

12
- 0000814330
- D. J. DiMaria, E. Cartier, and D. A. Buchanan, J. Appl. Phys. 304, 304 (1996).
- (1996) J. Appl. Phys. , vol.304 , pp. 304
- DiMaria, D.J.¹ Cartier, E.² Buchanan, D.A.³

13
- 0001767480
- I. S. Al-kofahi, J. F. Zhang, and G. Groeseneken, J. Appl. Phys. 81, 2686 (1997).
- (1997) J. Appl. Phys. , vol.81 , pp. 2686
- Al-kofahi, I.S.¹ Zhang, J.F.² Groeseneken, G.³

14
- 0000532822
- J. F. Zhang, I. S. Al-kofahi, and G. Groeseneken, J. Appl. Phys. 83, 843 (1998).
- (1998) J. Appl. Phys. , vol.83 , pp. 843
- Zhang, J.F.¹ Al-kofahi, I.S.² Groeseneken, G.³

15
- 0032284230
- J. D. Bude, B. E. Weir, and P. J. Silverman, Tech. Dig. Int. Electron Devices Meet. 44, 179 (1998).
- (1998) Tech. Dig. Int. Electron Devices Meet. , vol.44 , pp. 179
- Bude, J.D.¹ Weir, B.E.² Silverman, P.J.³

16
- 0033347305
- M. Rasras, I. DeWolf, G. Groeseneken, B. Kaczer, R. Degraeve, and H. E. Maes, Tech. Dig. Int. Electron Devices Meet. 45, 465 (1999).
- (1999) Tech. Dig. Int. Electron Devices Meet. , vol.45 , pp. 465
- Rasras, M.¹ DeWolf, I.² Groeseneken, G.³ Kaczer, B.⁴ Degraeve, R.⁵ Maes, H.E.⁶

17
- 0000292672
- T. Tomita, H. Utsunomiya, Y. Kamakura, and K. Taniguchi, Appl. Phys. Lett. 71, 3664 (1997).
- (1997) Appl. Phys. Lett. , vol.71 , pp. 3664
- Tomita, T.¹ Utsunomiya, H.² Kamakura, Y.³ Taniguchi, K.⁴

18
- 0001746911
- K. Deguchi, A. Ishida, S. Uno, Y. Kamakura, and K. Taniguchi, Appl. Phys. Lett. 77, 1384 (2000).
- (2000) Appl. Phys. Lett. , vol.77 , pp. 1384
- Deguchi, K.¹ Ishida, A.² Uno, S.³ Kamakura, Y.⁴ Taniguchi, K.⁵

19
- 0000664333
- D. J. DiMaria, Appl. Phys. Lett. 77, 2716 (2000).
- (2000) Appl. Phys. Lett. , vol.77 , pp. 2716
- DiMaria, D.J.¹

20
- 0033900450
- J. F. Zhang, H. K. Su, G. Groeseneken, and R. Degraeve, IEEE Trans. Electron Devices 47, 378 (2000).
- (2000) IEEE Trans. Electron Devices , vol.47 , pp. 378
- Zhang, J.F.¹ Su, H.K.² Groeseneken, G.³ Degraeve, R.⁴

21
- 0000499258
- D. J. DiMaria, J. Appl. Phys. 86, 2100 (1999).
- (1999) J. Appl. Phys. , vol.86 , pp. 2100
- DiMaria, D.J.¹

22
- 0042786086
- D. J. DiMaria, Appl. Phys. Lett. 75, 2427 (1999).
- (1999) Appl. Phys. Lett. , vol.75 , pp. 2427
- DiMaria, D.J.¹

23
- 0000399466
- D. J. DiMaria, J. Appl. Phys. 87, 8707 (2000).
- (2000) J. Appl. Phys. , vol.87 , pp. 8707
- DiMaria, D.J.¹

24
- 0000738807
- M. V. Fischetti, D. J. DiMaria, L. Dori, J. Batey, E. Tierney, and J. Stasiak, Phys. Rev. B 35, 4404 (1987).
- (1987) Phys. Rev. B , vol.35 , pp. 4404
- Fischetti, M.V.¹ DiMaria, D.J.² Dori, L.³ Batey, J.⁴ Tierney, E.⁵ Stasiak, J.⁶

25
- 0001320103
- D. J. DiMaria, Appl. Phys. Lett. 68, 3004 (1996).
- (1996) Appl. Phys. Lett. , vol.68 , pp. 3004
- DiMaria, D.J.¹

26
- 0000690442
- D. J. DiMaria and E. Cartier, J. Appl. Phys. 8, 3883 (1995).
- (1995) J. Appl. Phys. , vol.8 , pp. 3883
- DiMaria, D.J.¹ Cartier, E.²

27
- 0016334979
- A. S. Ginovker, V. A. Gritsenko, and S. P. Sinitsa, Phys. Status Solidi A 26, 489 (1974).
- (1974) Phys. Status Solidi A , vol.26 , pp. 489
- Ginovker, A.S.¹ Gritsenko, V.A.² Sinitsa, S.P.³

28
- 0031332017
- D. J. DiMaria and J. H. Stathis, Appl. Phys. Lett. 71, 3230 (1997).
- (1997) Appl. Phys. Lett. , vol.71 , pp. 3230
- DiMaria, D.J.¹ Stathis, J.H.²

29
- 0032275853
- J. H. Stathis and D. J. DiMaria, Tech. Dig. Int. Electron Devices Meet. 44, 167 (1998).
- (1998) Tech. Dig. Int. Electron Devices Meet. , vol.44 , pp. 167
- Stathis, J.H.¹ DiMaria, D.J.²

30
- 0033725308
- IEEE, NJ
- N. Kimizuka, K. Yamaguchi, K. Imai, T. Iizuka, C. T. Liu, R. C. Keller, and T. Horiuchi, in 2000 Sym. on VLSI Technol. (IEEE, NJ, 2000), pp. 92-93.
- (2000) 2000 Sym. on VLSI Technol. , pp. 92-93
- Kimizuka, N.¹ Yamaguchi, K.² Imai, K.³ Iizuka, T.⁴ Liu, C.T.⁵ Keller, R.C.⁶ Horiuchi, T.⁷

31
- 0043109034
- IEEE, Piscataway, NJ
- M. V. Fischetti, S. E. Laux, and D. J. DiMaria, in 1999 Silicon Nanoelectonics Workshop (IEEE, Piscataway, NJ, 1999), pp. 78-81.
- (1999) 1999 Silicon Nanoelectonics Workshop , pp. 78-81
- Fischetti, M.V.¹ Laux, S.E.² DiMaria, D.J.³

32
- 0032614265
- D. J. DiMaria and J. H. Stathis, Appl. Phys. Lett. 74, 1752 (1999).
- (1999) Appl. Phys. Lett. , vol.74 , pp. 1752
- DiMaria, D.J.¹ Stathis, J.H.²

33
- 21544467967
- D. J. DiMaria and J. W. Stasiak, J. Appl. Phys. 65, 2342 (1989).
- (1989) J. Appl. Phys. , vol.65 , pp. 2342
- DiMaria, D.J.¹ Stasiak, J.W.²

34
- 0029541581
- J. W. Lyding, T.-C. Shen, G. C. Abeln, C. Wang, E. T. Foley, and J. R. Tucker, Mater. Res. Soc. Symp. Proc. 380, 187 (1995).
- (1995) Mater. Res. Soc. Symp. Proc. , vol.380 , pp. 187
- Lyding, J.W.¹ Shen, T.-C.² Abeln, G.C.³ Wang, C.⁴ Foley, E.T.⁵ Tucker, J.R.⁶

35
- 0347862262
- edited by R. Degraeve Inst. of Phys. London
- For example, see special issue on scaling limits of gate oxides in Semicon. Sci. Technol., edited by R. Degraeve (Inst. of Phys. London, 2000), Vol. 15.
- (2000) Semicon. Sci. Technol. , vol.15

36
- 0346602237
- IEEE, NJ
- J. H. Stathis et al., 2000 Sym. on VLSI Technol. (IEEE, NJ, 2000), pp. 94-95.
- (2000) 2000 Sym. on VLSI Technol. , pp. 94-95
- Stathis, J.H.¹

37
- 0033750059
- B. E. Weir et al., Semicond. Sci. Technol. 15, 455 (2000).
- (2000) Semicond. Sci. Technol. , vol.15 , pp. 455
- Weir, B.E.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.