Comparative electron spin resonance study of epi- Lu2 O 3 / (111) Si and a-Lu2 O3 / (100) Si interfaces: Misfit point defects

Journal of Applied Physics

Volumn 107, Issue 9, 2010, Pages

  Somers, P ^a,b   Stesmans, A ^a,b   Afanas'Ev, V V ^a,b   Tian, W ^c   Edge, L F ^c   Schlom, D G ^c  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b Department of Chemistry   (Belgium)

^c Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING IN VACUUM; AS-GROWN; ELECTRON SPIN RESONANCE; HETEROEPITAXIAL; INTERFACE STRUCTURES; INTERFACE TRAPS; MISFIT DISLOCATIONS; SI DANGLING BONDS; THERMAL BUDGET; THERMAL STABILITY;

DEFECTS; EPITAXIAL GROWTH; GATE DIELECTRICS; GATES (TRANSISTOR); LATTICE MISMATCH; MOLECULAR BEAMS; PARAMAGNETISM; PASSIVATION; POINT DEFECTS; RESONANCE; SILICON COMPOUNDS; SPIN DYNAMICS; STANDARDS; TANNING; THERMODYNAMIC STABILITY;

AMORPHOUS SILICON;

EID: 79251498296     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3326516     Document Type: Article

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