Random and localized resistive switching observation in Pt/NiO/Pt

Physica Status Solidi - Rapid Research Letters

Volumn 1, Issue 6, 2007, Pages 280-282

  Yun, Jung Bin ^a   Kim, Sejin ^a   Seo, Sunae ^b   Lee, Myoung Jae ^b   Kim, Dong Chul ^b   Ahn, Seung Eon ^b   Park, Yongsoo ^b   Kim, Jiyoung ^c   Shin, Hyunjung ^a  

^a Kookmin University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE (AF); CURRENT SENSING; NANO-SIZED; NIO THIN FILMS; NON-VOLATILE MEMORIES (NVM); RESISTIVE MEMORY; RESISTIVE SWITCHING; TRANSITION METAL OXIDES;

EID: 44349155762     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200701205     Document Type: Article

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