Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer

Nanotechnology

Volumn 22, Issue 25, 2011, Pages

  Li, Yingtao ^a,b   Long, Shibing ^a   Lv, Hangbing ^a   Liu, Qi ^a   Wang, Yan ^a,b   Zhang, Sen ^a   Lian, Wentai ^a   Wang, Ming ^a   Zhang, Kangwei ^a   Xie, Hongwei ^a,b   Liu, Su ^b   Liu, Ming ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b LANZHOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE APPROACH; BARRIER HEIGHTS; MEMORY DEVICE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; TIO;

PLATINUM; RANDOM ACCESS STORAGE; SWITCHING; SWITCHING SYSTEMS;

ZIRCONIUM ALLOYS;

EID: 79956101439     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/25/254028     Document Type: Article

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