SCOPUS 정보 검색 플랫폼

Applied Physics A: Materials Science and Processing

Volumn 100, Issue 4, 2010, Pages 987-990

Nonvolatile bipolar resistance switching effects in multiferroic BiFeO 3 thin films on LaNiO3-electrodized Si substrates

(8) Chen, Xinman a,b Wu, Guangheng b Zhang, Hailei a Qin, Ni b Wang, Tao a Wang, Feifei a Shi, Wangzhou a Bao, Dinghua b

a SHANGHAI NORMAL UNIVERSITY (China)

b SUN YAT SEN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER MODEL; CONDUCTION MECHANISM; DEVICE CONFIGURATIONS; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MULTIFERROICS; NON-VOLATILE; OHMIC BEHAVIOR; PREFERENTIAL ORIENTATION; RESISTANCE RATIO; RESISTANCE SWITCHING; RESISTANCE SWITCHING EFFECT; SCHOTTKY; SI SUBSTRATES; SPACE CHARGE LIMITED CURRENTS; THREE ORDERS OF MAGNITUDE;

ELECTROFORMING; OXYGEN; OXYGEN VACANCIES; SWITCHING SYSTEMS; THIN FILMS;

VAPOR DEPOSITION;

EID: 79959359101 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-010-5910-y Document Type: Article

Times cited : (63)

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