Local leakage current behaviours of BiFeO3 films

Chinese Physics B

Volumn 20, Issue 11, 2011, Pages

  Zou, Cheng ^a,b   Chen, Bin ^b   Zhu, Xiao Jian ^b   Zuo, Zheng Hu ^b   Liu, Yi Wei ^b   Chen, Yuan Fu ^a   Zhan, Qing Feng ^a,b   Li, Run Wei ^a,b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

Author keywords

conductive atomic force microscopy; local leakage current; polycrystalline BiFeO3 thin films

Indexed keywords

ANNEALING TIME; CONDUCTIVE ATOMIC FORCE MICROSCOPY; LEAKAGE MECHANISM; LIGHT ILLUMINATION; LOCAL CHARGE; POLYCRYSTALLINE BIFEO; POST-ANNEALING TEMPERATURE;

ATOMIC FORCE MICROSCOPY; GRAIN BOUNDARIES; LEAKAGE CURRENTS; THIN FILMS;

FERROELECTRIC FILMS;

EID: 82155168473     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/20/11/117701     Document Type: Article

References (28)

1. Catalan G and Scott J F 2009 Adv. Mater. 21 2463
2. Hill N A 2000 J. Phys. Chem. B 104 6694
3. Wang J, Neaton J B, Zheng H, Nagarajan V, Ogale S B, Liu B, Viehland D, Vaithyanathan V, Schlom D G, Waghmare U V, Spaldin N A, Rabe K M, Wuttig M and Ramesh R 2003 Science 299 1719
4. Sun Y, Huang Z F, Fan H G, Ming X, Wang C Z and Chen G 2009 Acta Phys. Sin. 58 0193 (in Chinese)
5. Dho J, Qi X D, Kim H, MacManus-Driscoll J L and Blamire M G 2006 Adv. Mater. 18 1445
6. Ederer C and Spaldin N A 2005 Phys. Rev. B 71 224103
7. Singh S K, Ishiwara H, Sato K and Maruyama K 2007 J. Appl. Phys. 102 094109
8. Kawae T, Terauchi Y, Tsuda H, Kumeda M and Morimoto A 2009 Appl. Phys. Lett. 94 112904
9. Naganuma H, Miura J and Okamura S 2008 Appl. Phys. Lett. 93 052901
10. Murari N M, Kumar A, Thomas R and Katiyara R S 2008 Appl. Phys. Lett. 92 132904
11. Habouti S, Shiva R K, Solterbeck C H, Es-Sounia M and Zaporojtchenko V 2007 J. Appl. Phys. 102 44113
12. Pabst G W, Martin L W, Chu Y H and Ramesh R 2007 Appl. Phys. Lett. 90 072902
13. Yang H, Jain M, Suvorova N A, Zhou H, Luo H M, Feldmann D M, Dowden P C, DePaula R F, Foltyn S R and Jia Q X 2007 Appl. Phys. Lett. 91 72911
14. Xie Z, Luo E Z, Xu J B, Wilson I H, Peng H B, Zhao L H and Zhao B R 2000 Appl. Phys. Lett. 76 1923
15. Rozier Y, Gautier B, Hyvert G, Descamps A, Plossu C, Dubourdieu C and Ducroquet F 2009 Thin Soild Films 517 1868
16. Abe K and Komatsu S 1993 Japan. J. Appl. Phys. 32 4186
17. Fujisawa H, Shimizu M, Horiuchi T, Shiosaki T and Matsushige K 1997 Appl. Phys. Lett. 71 416
18. Guillan J, Taravel G, Defay E, Ulmer L, Galera L, Andre B and Baume F 2004 Integr. Ferroelectr. 67 93
19. Seidel J, Martin L W, He Q, Zhan Q, Chu Y H, Rother A, Hawkridge M E, Maksymovych P, Yu P, Gajek M, Balke N, Kalinin S V, Gemming S, Wang F, Catalan G, Scott J F, Spaldin N A, Orenstein J and Ramesh R 2009 Nat. Mater. 8 229
20. Hu S H, Hu G J, Meng X J, Wang G S, Sun J L, Guo S L, Chu J H and Dai N 2004 J. Cryst. Growth 260 109
21. Sushil K S, Shanthy S and Ishiwara H 2010 J. Appl. Phys. 108 054102
22. Hu H and Krupanidhi S B 1994 J. Mater. Res. 9 1484
23. Naganuma H, Miura J and Okamura S 2008 Appl. Phys. Lett. 93 52901
24. Choi T, Lee S, Choi Y J, Kiryukhin V and Cheong S W 2009 Science 324 63
25. Yang S Y, Martin L W, Byrnes S J, Conry T E, Basu S R, Paran D, Reichertz L, Ihlefeld J, Adamo C, Melville A, Chu Y H, Yang C H, Musfeldt J L, Schlom D G, Ager III J W and Ramesh R 2009 Appl. Phys. Lett. 95 62909
26. Basu S R, Martin L W, Chu Y H, Gajek M, Ramesh R, Rai R C, Xu X and Musfeldt J L 2008 Appl. Phys. Lett. 92 91905
27. Qin M, Yao Y and Liang Y C 2008 Appl. Phys. Lett. 93 122904
28. Luo B C, Chen C L and Xie L 2011 Acta Phys. Sin. 60 027306 (in Chinese)