Excellent resistance switching characteristics of Pt/single-crystal Nb-doped SrTiO3 Schottky junction

21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006

Volumn 2006, Issue , 2006, Pages 88-89

  Sim, Hyunjun ^a   Seong, Dong Jun ^a   Chang, Man ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); HYSTERESIS; NIOBIUM; SCHOTTKY BARRIER DIODES; SINGLE CRYSTALS; STRONTIUM COMPOUNDS; SWITCHING;

NONVOLATILE MEMORY APPLICATIONS; RESISTANCE SWITCHING; SCHOTTKY TUNNEL BARRIER WIDTH; SWITCHING MECHANISM;

SEMICONDUCTOR JUNCTIONS;

EID: 33751036259     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2006.1629507     Document Type: Conference Paper

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