SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 85, Issue 12, 2008, Pages 2420-2424

Resistive switching effects of HfO2 high-k dielectric

(4) Chan, M Y a,b Zhang, T a Ho, V b Lee, P S a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b CHARTERED SEMICONDUCTOR MANUFACTURING LTD (Singapore)

Author keywords

High k dielectrics; Memory device; Resistive switching

Indexed keywords

ANNEALING; DATA STORAGE EQUIPMENT; DIELECTRIC MATERIALS; ELECTRIC FIELDS; HAFNIUM COMPOUNDS; OXYGEN; OXYGEN VACANCIES; SWITCHING SYSTEMS;

APPLIED ELECTRIC FIELDS; CONDUCTING PATHS; FILM CONDUCTIVITIES; HIGH DENSITIES; HIGH RESISTANCES; HIGH-K DIELECTRICS; LOW RESISTANCES; LOW-POWER MEMORIES; MEMORY DEVICE; RESISTANCE RATIOS; RESISTIVE SWITCHING; RETENTION BEHAVIORS; SWITCHING BEHAVIORS; SWITCHING PARAMETERS; SWITCHING PROPERTIES; VOLATILE MEMORIES;

SWITCHING;

EID: 56649108011 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2008.09.021 Document Type: Article

Times cited : (60)

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