Microstructure dependence of leakage and resistive switching behaviours in Ce-doped BiFeO3 thin films

Journal of Physics D: Applied Physics

Volumn 44, Issue 41, 2011, Pages

  Zhu, Xiaojian ^a   Zhuge, Fei ^a   Li, Mi ^a   Yin, Kuibo ^a   Liu, Yiwei ^a   Zuo, Zhenghu ^a   Chen, Bin ^a   Li, Run Wei ^a  

^a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS STRUCTURES; ANNEALING TEMPERATURES; CRYSTALLINE STRUCTURE; CURRENT INCREASE; METAL FILAMENTS; OHMIC CONDUCTION; OXYGEN VACANCY CONCENTRATION; PROGRAMMING VOLTAGE; RESISTIVE SWITCHING; SCHOTTKY EMISSIONS; SPACE CHARGE LIMITED CONDUCTION;

AMORPHOUS FILMS; ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; OXYGEN VACANCIES; SOL-GEL PROCESS; SWITCHING SYSTEMS;

CERIUM;

EID: 80053375590     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/41/415104     Document Type: Article

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