Resistive switching in Ag-Ge-Se with extremely low write currents

Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07

Volumn , Issue , 2007, Pages 82-85

  Schindler, C ^a   Meier, M ^a   Waser, R ^a   Kozicki, M N ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Cation migration; Non volatile memory; Resistive switching; Solid electrolyte

Indexed keywords

ELECTRODES; GERMANIUM COMPOUNDS; METAL IONS; METALS; NONVOLATILE STORAGE; POSITIVE IONS; POTENTIOMETRIC SENSORS; SELENIUM COMPOUNDS; SOLID ELECTROLYTES; SWITCHING;

CATION MIGRATION; HIGH-RESISTANCE STATE; LOW-POWER CONSUMPTION; LOW-RESISTANCE STATE; METALLIC CONNECTIONS; NON-VOLATILE MEMORY; RESISTIVE SWITCHING; SWITCHING MECHANISM;

SILVER COMPOUNDS;

EID: 48549095113     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/nvmt.2007.4389953     Document Type: Conference Paper

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