Evidences of oxygen-mediated resistive-switching mechanism in TiN\ HfO 2 \Pt cells

Applied Physics Letters

Volumn 97, Issue 24, 2010, Pages

  Goux, L ^a   Czarnecki, P ^a   Chen, Y Y ^a   Pantisano, L ^a   Wang, X P ^a   Degraeve, R ^a   Govoreanu, B ^a   Jurczak, M ^a   Wouters, D J ^a   Altimime, L ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CELL OPERATION; CHAMBER ATMOSPHERE; ELECTRODE THICKNESS; OXYGEN PERMEABILITY; OXYGEN SPECIES; PT ELECTRODE; RESISTANCE STATE; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; SWITCHING MECHANISM;

ELECTROFORMING; HAFNIUM COMPOUNDS; OXYGEN; PLATINUM; SWITCHING; SWITCHING SYSTEMS; TITANIUM NITRIDE;

OXYGEN VACANCIES;

EID: 78650360593     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3527086     Document Type: Article

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