Three level, six state multilevel magnetoresistive RAM(MRAM)

Journal of Applied Physics

Volumn 85, Issue 8 II A, 1999, Pages 4782-4784

  Jeong, Won Cheol ^a   Lee, Byung Il ^a   Joo, Seung Ki ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETORESISTANCE; PHOTOLITHOGRAPHY; RANDOM ACCESS STORAGE;

MAGNETIC SWITCHING; MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) CELLS;

MAGNETIC MATERIALS;

EID: 0032606588     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370480     Document Type: Article

References (5)

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3. D. D. Tang, P. K. Wang, V. S. Speriosu, S. Le, and K. K. Kung, IEEE Trans. Magn. 31, 3206 (1995).
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5. A. V. Pohm, J. M. Daughton, J. Brown, and R. Beech, IEEE Trans. Magn. 31, 3200 (1995).