Temperature instability of resistive switching on HfOx-based RRAM devices

IEEE Electron Device Letters

Volumn 31, Issue 5, 2010, Pages 476-478

  Fang, Z ^a   Yu, H Y ^a   Liu, W J ^a   Wang, Z R ^a   Tran, X A ^a   Gao, B ^b   Kang, J F ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b PEKING UNIVERSITY   (China)

Author keywords

Resistive random access memory (RRAM); Resistive switching; Temperature instability

Indexed keywords

HIGH TEMPERATURE; HIGH-RESISTANCE STATE; MULTI-BITS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; ROOM TEMPERATURE; TEMPERATURE INSTABILITY;

HAFNIUM COMPOUNDS; NONVOLATILE STORAGE; OXYGEN; RANDOM ACCESS STORAGE; STABILITY; SWITCHING SYSTEMS;

SWITCHING;

EID: 77951797129     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2041893     Document Type: Article

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