Nonvolatile resistive switching memory based on amorphous carbon

Applied Physics Letters

Volumn 96, Issue 16, 2010, Pages

  Zhuge, F ^a   Dai, W ^a   He, C L ^a   Wang, A Y ^a   Liu, Y W ^a   Li, M ^a   Wu, Y H ^b   Cui, P ^a   Li, Run Wei ^a  

^a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOSTRUCTURES; CARBON-BASED ELECTRONICS; H-BASED; HYDROGENATED AMORPHOUS CARBON (A-C:H); MEMORY EFFECTS; METAL FILAMENTS; NON-VOLATILE; ON/OFF RATIO; PREPARATION PROCESS; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; RETENTION TIME;

NANOSTRUCTURES; SWITCHING SYSTEMS;

AMORPHOUS CARBON;

EID: 77951837588     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3406121     Document Type: Article

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