Direct observation of Ag filamentary paths in organic resistive memory devices

Advanced Functional Materials

Volumn 21, Issue 20, 2011, Pages 3976-3981

  Cho, Byungjin ^a   Yun, Jin Mun ^a   Song, Sunghoon ^a   Ji, Yongsung ^a   Kim, Dong Yu ^a   Lee, Takhee ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

bipolar switching; filamentary paths; organic electronics; organic resistive memory

Indexed keywords

ARRAY STRUCTURES; BIPOLAR SWITCHING; BISTABLE SWITCHING; CONDUCTING ATOMIC FORCE MICROSCOPY; CONDUCTIVE PATHS; CURRENT IMAGE; DEVICE-SCALING; ELECTROCHEMICAL REDOX; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; FILAMENTARY PATHS; LOW-CONDUCTING STATE; MEMORY PERFORMANCE; METALLIC BRIDGE; ORGANIC ELECTRONICS; ORGANIC MATERIALS; ORGANIC MEMORY DEVICES; ORGANIC RESISTIVE MEMORY; P-TYPE; REACTION MODEL; SWITCHING EFFECT; SWITCHING MECHANISM; SWITCHING PROPERTIES;

ATOMIC FORCE MICROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; OPTIMIZATION; REDOX REACTIONS; SWITCHING; TRANSMISSION ELECTRON MICROSCOPY;

SILVER;

EID: 80054813115     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201101210     Document Type: Article

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