Low-frequency noise assessment for deep submicrometer CMOS technology nodes

Journal of the Electrochemical Society

Volumn 151, Issue 5, 2004, Pages

  Claeys, C ^a,b   Mercha, A ^a   Simoen, E ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; CRYSTALLIZATION; FIELD EFFECT TRANSISTORS; PARAMETER ESTIMATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE; THERMOMETERS; WHITE NOISE;

GENERATION-RECOMBINATION (GR) NOISE; GR NOISE SPECTROSCOPY; RANDOM TELEGRAPH SIGNALS (RTS); THERMAL ACTIVATION;

CMOS INTEGRATED CIRCUITS;

EID: 2942618387     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1683633     Document Type: Review

References (113)

1. E. Simoen and C. Claeys, Semicond. Sci. Technol., 14, R61 (1999).
2. E. Simoen and C. Claeys, Solid-State Electron., 43, 865 (1999).
3. F. Scholz, J. M. Hwang, and D. K. Schroder, Solid-State Electron., 31, 205 (1988).
4. E. Simoen and C. Claeys, Mater. Sci. Eng., B, 91-92, 136 (2002).
5. E. Simoen and C. Claeys, in Noise and Fluctuations Control in Electronic Devices, A. Balandin, Editor, Chap. 8, American Scientific Publishers, Stevenson Ranch, CA (2002).
6. R. Jayaraman and C. G. Sodini, IEEE Trans. Electron Devices, 36, 1773 (1989).
7. C. Surya and T. Y. Hsiang, Phys. Rev. B, 33, 4898 (1986).
8. R. J. T. Bunyan, M. J. Uren, J. C. Alderman, and W. Eccleston, IEEE Electron Device Lett., 13, 279 (1992).
9. B. M. Tenbroek, M. S. L. Lee, W. Redman-White, R. J. T. Bunyan, and M. Uren, IEEE Trans. Electron Devices, 43, 2240 (1996).
10. W. Jin, W. Liu, S. K. H. Fung, P. C. H. Chan, and C. Hu, IEEE Trans. Electron Devices, 48, 730 (2001).
11. R. Ostermeir, K. Brunner, G. Abstreiter, and W. Weber, IEEE Trans. Electron Devices, 39, 858 (1992).
12. A. van der Ziel, J. B. Anderson, A. N. Birbas, W. C. Chen, P. Fang, V. M. Hietala, C. S. Park, P. R. Pukite, M. F. Toups, X. Wu, J. Xu, and A. C. Young, Solid-State Electron., 29, 1069 (1986).
13. K. Sasaki and K. Sato, Jpn. J. Appl. Phys., Part 1, 31, 1018 (1992).
14. Y. Sato, H. Miyagi, H. Takano, S. Taguchi, T. Matsumoto, and K. Sato, Solid-State Electron., 42, 664 (1998).
15. M. Macucci and B. Pellegrini, in Proceedings of the 11th International Conference on Noise in Physical Systems and 1/f Fluctuations (ICNF 11), T. Musha, S. Sato, and M. Yamamoto, Editors, Ohmsha Ltd, Tokyo, Japan, p. 203 (1991).
16. E. Simoen, J. Vanhellemont, and C. Claeys, Physica B, 228, 219 (1996).
17. E. Simoen and C. Claeys, IEEE Trans. Electron Devices, 46, 1725 (1999).
18. P. O. Lauritzen, IEEE Trans. Electron Devices, 15, 770 (1968).
19. K. M. Van Vliet, IEEE Trans. Electron Devices, 23, 1236 (1976).
20. K. M. Van Vliet and A. van der Ziel, IEEE Trans. Electron Devices, 24, 1127 (1977).
21. W. Dabrowski, Solid-State Electron., 30, 205 (1987).
22. F. Faccio, F. Anghinolfi, E. H. M. Heijne, P. Jarron, and S. Cristoloveanu, IEEE Trans. Electron Devices, 45, 1033 (1998).
23. W. Jin, P. C. H. Chan, S. K. H. Fung, and P. K. Ko, IEEE Trans. Electron Devices, 46, 1180 (1999).
24. Y.-C. Tseng, W. M. Huang, M. Mendicino, D. J. Monk, P. J. Welch, and J. C. S. Woo, IEEE Trans. Electron Devices, 48, 1428 (2001).
25. V. Dessard, B. Iñíguez, S. Adriaensen, and D. Flandre, IEEE Trans. Electron Devices, 49, 1289 (2002).
26. E. Simoen, U. Magnusson, A. L. P. Rotondaro, and C. Claeys, IEEE Trans. Electron Devices, 41, 330 (1994).
27. A. Mercha, E. Simoen, and C. Claeys, Appl. Phys. Lett., 82, 1790 (2003).
28. G. Iannaccone, F. Crupi, B. Neri, and S. Lombardo, Appl. Phys. Lett., 77, 2876 (2000).
29. M. J. Uren and M. J. Kirton, Adv. Phys., 38, 367 (1989).
30. T. Hardy, M. J. Deen, and R. M. Murowinski, IEEE Trans. Electron Devices, 46, 1339 (1999).
31. D. C. Murray, A. G. R. Evans, and J. C. Carter, IEEE Trans. Electron Devices, 38, 407 (1991).
32. F. Scholz and J. Roach, Solid-State Electron., 35, 447 (1992).
33. B. K. Jones, IEEE Trans. Electron Devices, 41, 2188 (1994).
34. D. V. Camin, C. F. Colombo, and V. Grassi, J. Phys. IV, 12, Pr3-37 (2002).
35. I. Lartigau, J.-M. Routoure, R. Carin, A. Mercha, E. Simoen, and C. Claeys, in Proceedings of the 17th International Conference on Noise and Fluctuations, J. Sikula, Editor, p. 763, Prague, Czech Republic, Aug 18-22, 2003.
36. P. V. Kolev and M. J. Deen, J. Appl. Phys., 83, 820 (1998).
37. G. Ghibaudo, O. Roux, Ch. Nguyen-Duc, F. Balestra, and J. Brini, Phys. Status Solidi A, 124, 571 (1991).
38. D. M. Fleetwood, M. R. Shaneyfelt, W. L. Warren, J. R. Schwank, T. L. Meisenheimer, and P. S. Winokur, Microelectron. Reliab., 35, 403 (1995).
39. A. Mercha, E. Simoen, G. Richardson, and C. Claeys, in Proceedings of the European Solid-State Device Research Conference (ESSDERC) 2002, G. Baccarani, E. Gnani, and M. Rudan, Editors, The University of Bologna, Florence, Italy, p. 79 (2002).
40. K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, IEEE Trans. Electron Devices, 37, 654 (1990).
41. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, IEEE Trans. Electron Devices, 37, 1323 (1990).
42. E. P. Vandamme and L. K. J. Vandamme, IEEE Trans. Electron Devices, 47, 2146 (2000).
43. A. Palma, A. Godoy, I. A. Jiminez-Tejada, J. E. Carceller, and J. A. Lopez-Villanueva, Phys. Rev. B, 56, 9565 (1997).
44. A. Pacelli, S. Villa, A. L. Lacaita, and L. M. Perron, IEEE Trans. Electron Devices, 46, 1029 (1999).
45. N. B. Lukyanchikova, M. V. Petrichuk, N. P. Garbar, E. Simoen, and C. Claeys, Appl. Phys. A: Mater. Sci. Process., 70, 345 (2000).
46. N. V. Amarasinghe, Z. Çelik-Butler, and A. Keshavarz, J. Appl. Phys., 89, 5526 (2001).
47. W. Quan, D. M. Kim, and Y.-J. Kim, Jpn. J. Appl. Phys., Part 1, 41, 4484 (2002).
48. R. R. Siergiej, M. H. White, and N. Saks, Solid-State Electron., 35, 843 (1992).
49. C.-Y. Hu, S. Banerjee, K. Sadra, B. G. Streetman, and R. Sivan, IEEE Electron Device Lett., 17, 276 (1996).
50. S. Martin, G. P. Li, H. Guan, S. D'Souza, M. Matloubian, G. Claudius, and C. Compton, Tech. Dig. - Int. Electron Devices Meet., 1998, 85.
51. M. J. Knitel, P. H. Woerlee, A. J. Scholten, and A. T. A. Zegers-Van Duijnhoven, Tech. Dig. - Int. Electron Devices Meet., 2000, 463.
52. R. Kolarova, T. Skotnicki, and J. A. Chroboczek, Microelectron. Reliab., 41, 579 (2001).
53. International Technology Roadmap for Semiconductors, 2001 edition, www.itrs.net/2001 SIA Roadmap/Home.htm.
54. F. M. Klaassen, IEEE Trans. Electron Devices, 18, 887 (1971).
55. H. S. Momose, T. Ohguro, S. Nakamura, Y. Toyoshima, H. Ishiuchi, and H. Iwai, IEEE Trans. Electron Devices, 49, 1597 (2002).
56. K. Tanaka, K. Watanabe, H. Ishino, S. Sugawa, A. Teramoto, M. Hirayama, and T. Ohmi, Jpn. J. Appl. Phys., Part 1, 42, 2106 (2003).
57. H. S. Momose, T. Ohguro, K. Kojima, S. Nakamura, and Y. Toyoshima, IEEE Trans. Electron Devices, 50, 1001 (2003).
58. E. Simoen, G. Bosman, J. Vanhellemont, and C. Claeys, Appl. Phys. Lett., 66, 2507 (1995).
59. F.-C. Hou, G. Bosman, E. Simoen, J. Vanhellemont, and C. Claeys, IEEE Trans. Electron Devices, 45, 2528 (1998).
60. M. Tsuchiaki, H. Fujimori, T. Iinuma, and A. Kawasaki, J. Appl. Phys., 85, 8255 (1999).
61. H. S. Momose, in ULSI Process Integration III, C. L. Claeys, F. Gonzalez, J. Murota, P. Fazan, and R. Singh, Editors, PV 2003-06, p. 360, The Electrochemical Society Proceedings Series, Pennington, NJ (2003).
62. E. Simoen and C. Claeys, Solid-State Electron., 39, 949 (1996).
63. S.-H. Renn, J. Jomaah, C. Raynaud, and F. Balestra, Electron. Lett., 34, 1788 (1998).
64. T. Yonehara, K. Sakaguchi, and N. Sato, Appl. Phys. Lett., 64, 2108 (1994).
65. T. Ushiki, H. Ishino, and T. Ohmi, IEEE Electron Device Lett., 21, 610 (2000).
66. J. Pretet, T. Matsumoto, T. Poiroux, S. Cristoloveanu, R. Gwoziecki, C. Raynaud, A. Roveda, and H. Brut, in Proceedings of the European Solid-State Device Research Conference (ESSDERC) 2002, G. Baccarani, E. Gnani, and M. Rudan, Editors, The University of Bologna, Florence, Italy, p. 515 (2002).
67. W.-C. Lee and C. Hu, IEEE Trans. Electron Devices, 48, 1366 (2001).
68. A. Mercha, E. Simoen, and C. Claeys, IEEE Trans. Electron Devices, 50, 1675 (2003).
69. S. J. Mathew, G. Niu, W. B. Dubbelday, I. D. Cressler, J. A. Ott, J. O. Chu, P. M. Mooney, K. L. Kavanagh, B. S. Meyerson, and I. Lagnado, Tech. Dig. - Int. Electron Devices Meet., 1997, 815.
70. J. A. Chroboczek and G. Ghibaudo, IEE Proc.-G: Circuits, Devices Syst., 149, 51 (2002).
71. S. Okhonin, M. A. Py, B. Georgescu, H. Fischer, and L. Risch, IEEE Trans. Electron Devices, 46, 1514 (1999).
72. J. A. Chroboczek and G. Ghibaudo, Microelectron. Reliab., 40, 1897 (2000).
73. G. Ghibaudo and J. A. Chroboczek, Solid-State Electron., 46, 393 (2002).
74. T. Tsuchiya, T. Matsuura, and J. Murota, Jpn. J. Appl. Phys., Part 1, 40, 5290 (2001).
75. P. H. Woerlee, M. J. Knitel, V. M. H. Meyssen, R. M. D. A. Velghe, and A. T. A. Zegers van Duijnhoven, in Proceedings of the European Solid-State Device Research Conference (ESSDERC) 2001, H. Ryssel, G. Wachutka, and H. Grünbacher, Frontier Group, Nuremberg, Germany, p. 107 (2001).
76. T. Yoshitomi, H. Kimijima, S. Ishizuka, Y. Miyahara, T. Ohguro, E. Morifuji, T. Morimoto, H. Sasaki Momose, Y. Katsumata, and H. Iwai, Technical Digest for VLSI Symposium, 1996, 98.
77. T. Yoshitomi, H. Kimijima, S. Ishizuka, Y. Miyahara, T. Ohguro, E. Morifuji, T. Morimoto, H. Sasaki Momose, Y. Katsumata, and H. Iwai, Solid-State Electron., 43, 1219 (1999).
78. A. Satka, D. Donoval, and F. Mita, Mater. Sci. Eng., B, 91-92, 239 (2002).
79. M. E. Welland and R. H. Koch, Appl. Phys. Lett., 48, 724 (1986).
80. L. K. J. Vandamme, IEEE Trans. Electron Devices, 41, 2176 (1994).
81. B. K. Jones, Adv. Electron, Electron Phys., 87, 201 (1993).
82. B. K. Jones, IEE Proc.-G: Circuits, Devices Syst., 149, 13 (2002).
83. C. Claeys and E. Simoen, Microelectron. Retiab., 40, 1815 (2000).
84. M. Da Rold, E. Simoen, S. Mertens, M. Schaekers, G. Badenes, and S. Decoutere, Microelectron. Reliab., 41, 1933 (2001).
85. P. Morfouli, G. Ghibaudo, T. Ouisse, E. Vogel, W. Hill, V. Misra, P. McLarty, and J. J. Wortman, IEEE Electron Device Lett., 17, 395 (1996).
86. Z. J. Ma, Z. H. Liu, Y. C. Cheng, P. K. Ko, and C. Hu, IEEE Trans. Electron Devices, 41, 2205 (1994).
87. H. Kimijima, T. Ohguro, B. Evans, B. Acker, J. Bloom, H. Mabuchi, D.-L. Kwong, E. Morifuji, T. Yoshitomi, H. Sasaki Momose, M. Kinugawa, Y. Katsumata, and H. Iwai, Technical Digest for VLSI Symposium, 1999, 119.
88. M. Toita, T. Akaboshi, and H. Imai, IEEE Electron Device Lett., 22, 548 (2001).
89. K. W. Chew, K. S. Yeo, S.-F. Chu, and Y. M. Wang, IEE Proc.-G: Circuits, Devices Syst., 148, 312 (2001).
90. S. D'Souza, L.-M. Hwang, M. Matloubian, S. Martin, P. Sherman, A. Joshi, H. Wu, S. Bhattacharya, and P. Kempf, Tech. Dig. - Int. Electron Devices Meet., 1999, 839.
91. R. Brederlow, W. Weber, R. Jurk, C. Dahl, S. Kessel, J. Holz, W. Sauert, P. Klein, B. Lemaitre, D. Schmitt-Landsiedel, and R. Thewes, in Proceedings of the European Solid-State Device Research Conference (ESSDERC) 1998, A. Touboul, Y. Danto, J.-P. Klein, and H. Grünbacher, Editors, Frontier Group, Bordeaux, France, p. 472 (1998).
92. T. B. Hook, E. Adler, F. Guarin, J. Lukaitis, N. Rovedo, and K. Schruefer, IEEE Trans. Electron Devices, 48, 1346 (2001).
93. E. W. A. Young, in Semiconductor Silicon/2002 (9th International Symposium), H. R. Huff, L. Fabry, and S. Kishino, Editors, PV 2002-2, p. 735, The Electrochemical Society Proceedings Series, Pennington, NJ (2002).
94. B. Guillaumot, X. Garros, J. Lime, K. Oshina, B. Tavel, J. A. Chroboczek, P. Masson, R. Truche, A. M. Papon, F. Martin, J. F. Damlencourt, S. Maitrejean, M. Rivoire, C. Leroux, S. Cristoloveanu, G. Ghibaudo, J. L. Autran, T. Skotnicki, and S. Deleonibus, in International Electron Devices Meeting (IEDM) 2002, p. 255, San Francisco, CA, Dec 9-11, 2002.
95. E. Simoen, A. Mercha, L. Pantisano, C. Claeys, and E. Young, Abstract 574, The Electrochemical Society Meeting Abstracts, Vol. 2003-02, Orlando, FL, Oct 12-16, 2003.
96. H. Sauddin, Y. Yoshihara, S. Ohmi, K. Tsutsui, and H. Iwai, Abstract 712, The Electrochemical Society Meeting Abstracts, Vol. 2003-02, Orlando, FL, Oct 12-16, 2003.
97. M. De Murcia, M. Marin, Y. Akue Allogo, D. Rigaud, P. Llinares, and D. Cottin, in Proceedings of the 16th International Conference on Noise in Physical Systems and 1/f Fluctuations (ICNF 2001), G. Bosman, Editor, World Scientific, Teaneck, NJ, p. 149 (2001).
98. J. A. Johansen, H. Figenschau, X. Chen, A. van Rheenen, and C. Salm, in Proceedings of the 16th International Conference on Noise in Physical Systems and 1/f Fluctuations (ICNF 2001), C. Bosman, Editor, World Scientific, Teaneck, NJ, p. 161 (2001).
99. N. Lukyanchikova, M. V. Petrichuk, N. Garbar, E. Simoen, and C. Claeys, Appl. Phys. Lett., 71, 3874 (1997).
100. H. Lee, J.-H. Lee, H. Shin, Y. J. Park, and H. S. Min, IEEE Electron Device Lett., 22, 449 (2001).
101. H. Lee, J.-H. Lee, H. Shin, Y.-J. Park, and H. S. Min, IEEE Trans. Electron Devices, 49, 605 (2002).
102. C. M. Osburn, J. Y. Tsai, and J. Sun, J. Electron. Mater., 25, 1725 (1996).
103. E. C. Jones and N. C. Cheung, J. Vac. Sci. Technol. B, 14, 236 (1996).
104. F. La Via and E. Rimini, IEEE Electron Device Lett., 44, 526 (1997).
105. E. Simoen, A. Poyai, C. Claeys, N. Lukyanchikova, M. Petrichuk, N. Garbar, A. Czerwinski, J. Katcki, J. Ratajczak, and E. Gaubas, J. Mater. Sci.: Mater. Electron., 12, 207 (2001).
106. N. B. Lukyanchikova, M. V. Petrichuk, N. Garbar, E. Simoen, A. Poyai, and C. Claeys, IEEE Electron Device Lett., 21, 408 (2000).
107. E. P. Vandamme, L. K. J. Vandamme, C. Claeys, E. Simoen, and R. J. Schreutelkamp, Solid-State Electron., 38, 1893 (1995).
108. E. P. Vandamme and L. K. J. Vandamme, Microelectron. Reliab., 36, 1107 (1996).
109. N. Collaert, P. Verheyen, and K. De Meyer, in Proceedings of the European Solid-State Device Research Conference (ESSDERC) 1999, H. E. Maes, R. P. Mertens, G. Declerck, and H. Grünbacher, Frontier Group, Paris, France, p. 308 (1999).
110. J. M. Hergenrother, T. Nigam, G. D. Wilk, F. P. Klemens, D. Monroe, T. W. Sorch, B. Bush, M. L. Green, D. A. Muller, P. M. Voyles, J. L. Grazul, E. J. Shero, M. E. Givens, C. Pomarede, M. Mazanec, and C. Werkhoven, in Semiconductor Silicon 2002 (9th International Symposium), H. R. Huff, L. Fabry, and S. Kishino, Editors, PV 2002-02, p. 929, The Electrochemical Society Proceedings Series, Pennington, NJ (2002).
111. F. Allibert, T. Ernst, J. Pretet, N. Hefyene, C. Perret, A. Zaslavsky, and S. Cristoloveanu, Solid-State Electron., 45, 559 (2001).
112. J.-S. Lee, Y.-K. Choi, D. Ha, T.-J. King, and J. Bokor, IEEE Electron Device Lett., 23, 722 (2002).
113. J. S. Lee, Y.-K. Choi, D. Ha, S. Balasubramanian, T.-S. King, and J. Bokor, IEEE Electron Device Lett., 24, 186 (2003).