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Volumn 89, Issue 10, 2001, Pages 5526-5532

Extraction of oxide trap properties using temperature dependence of random telegraph signals in submicron metal-oxide-semiconductor field-effect transistors

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Indexed keywords


EID: 0035873395     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1367404     Document Type: Article
Times cited : (42)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.