Quantization effects in inversion layers of PMOSFET's on Si (100) substrates

IEEE Electron Device Letters

Volumn 17, Issue 6, 1996, Pages 276-278

  Hu, C Y ^a,c   Banerjee, S ^a,c   Sadra, K ^b,c   Streetman, B G ^a,c   Sivan, R ^a,c  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF MISSOURI   (United States)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CHARGE CARRIERS; COMPOSITION; ELECTRON ENERGY LEVELS; NUMERICAL METHODS; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SILICON WAFERS;

DOPING CONCENTRATION; EFFECTIVE MASS APPROXIMATION; HEAVY HOLE SUBBANDS; HOLE GAS DISTRIBUTIONS; INVERSION LAYERS; LIGHT HOLE SUBBANDS; POISSON EQUATION; QUANTIZATION EFFECTS; SCHRODINGER EQUATION; THRESHOLD VOLTAGE SHIFT;

MOSFET DEVICES;

EID: 0030172380     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.496456     Document Type: Article

References (7)

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