Electrical characterization of ultra-shallow junctions formed by diffusion from a CoSi2 layer

IEEE Transactions on Electron Devices

Volumn 44, Issue 4, 1997, Pages 526-534

  La Via, Francesco ^a   Rimini, Emanuele ^b  

^a CNR IMETEM   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE MEASUREMENT; COBALT COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRIC CURRENT MEASUREMENT; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; VOLTAGE MEASUREMENT;

CAPACITANCE VOLTAGE MEASUREMENT; CURRENT VOLTAGE MEASUREMENT; ULTRA SHALLOW JUNCTION;

SEMICONDUCTOR JUNCTIONS;

EID: 0031117280     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.563354     Document Type: Article

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