Investigation of the reliability of Unibond and SIMOX N-MOSFETs using charge pumping and noise techniques

Electronics Letters

Volumn 34, Issue 18, 1998, Pages 1788-1790

  Renn, Shing Hwa ^a   Jomaah, J ^a   Raynaud, C ^a   Balestra, F ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE MEASUREMENT; HOT CARRIERS; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SIGNAL NOISE MEASUREMENT; SILICA;

CHARGE PUMPING TECHNIQUES;

MOSFET DEVICES;

EID: 0032480203     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981222     Document Type: Article

References (4)

1. AUBERTON-HERVÉ, A.J.: 'SOI: Materials to systems'. IEDM Tech. Dig., 1996, pp. 3-10
2. CRISTOLOVEANU, S., GULWADI, S.M., IOANNOU, D.E., CAMPISI, G.J., and HUGHES, H.L.: 'Hot-electron-induced degradation of front and back channels in partially and fully depleted SIMOX MOSFETs', IEEE Electron Devices Lett., 1992, 13, pp. 603-605
3. BRUEL, M.: "Smart cut': A promising new SOI material technology'. Proc. 1995 IEEE SOI Conf., 1995, pp. 178-179
4. RENN, S.H., RAYNAUD, C., PELLOIE, J.L., and BALESTRA, F.: 'Comparison of hot-carrier effects in deep submicron N- and P-channel partially- and fully-depleted unibond and SIMOX MOSFETs'. Proc. IEEE IRPS'98 Conf., Reno, Nevada, USA, 1998, pp. 203-208