New mechanism of body charging in partially depleted SOI-MOSFETs with ultra-thin gate oxides

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 515-518

  Pretet, J ^a,b   Matsumoto, T ^a   Poiroux, T ^c   Cristoloveanu, S ^a   Gwoziecki, R ^c   Raynaud, C E ^c   Roveda, A ^b   Brut, H ^b  

^a IMEP LAHC   (France)

^b STMICROELECTRONICS   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRON TUNNELING; GATES (TRANSISTOR); MOS DEVICES;

AGGRESSIVE SCALING; FLOATING BODY EFFECT; GATE TUNNELING CURRENTS; LOW DRAIN VOLTAGES; PARTIALLY DEPLETED; PARTIALLY-DEPLETED SOI; TIME DEPENDENT BEHAVIOR; ULTRA THIN GATE OXIDE;

MOSFET DEVICES;

EID: 84907704789     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194981     Document Type: Conference Paper

References (5)

1. W. C. Lee and C. Hu, "Modeling gate and substrate currents due to conduction and valence band electron and hole tunneling", Symp. on VLSItechnology,2000, pp. 198-199.
2. S. Cristoloveanu and S.S. Li, Electrical Characterization of Silicon-On-Insulator Materials and Devices, Kluwer, 1995.
3. http://www-device.eecs.berkeley.edu/~bsimsoi
4. K. M. Cao et al., "BSIM 4 gate leakage model including source-drain partition", IEDMTech. Dzg.,2000, pp. 815-818.
5. S. K. H. Fung et al., "Controlling floating-body effects for 0.13 μm and 0.1 μm SOI CMOS", IEDM Tech. Dig., 2000, pp 231-234.