SOI thermal impedance extraction methodology and its significance for circuit simulation

IEEE Transactions on Electron Devices

Volumn 48, Issue 4, 2001, Pages 730-736

  Jin, Wei ^a,b   Liu, Weidong ^a,c   Fung, Samuel K H ^a,d   Chan, Philip C H ^a,b   Hu, Chenming ^a,c  

^a IEEE   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d IBM MICROELECTRONICS   (United States)

Author keywords

Self heating effect (SHE); SOI MOSFET; Thermal impedance

Indexed keywords

HIGH-FREQUENCY CIRCUITS; SELF-HEATING EFFECTS (SHE);

CAPACITANCE; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; HEAT RESISTANCE; MOSFET DEVICES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; THERMAL EFFECTS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0035310019     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.915707     Document Type: Article

References (10)

1. Mainstreaming of the SOI technology
2. Measurement and modeling of self-heating in SOI NMOSFET's
3. TITLE?
4. Measurement of I - V curves of silicon-on-insulator (SOI) MOSFET's without self-heating
5. An analytical drain current model considering both electron and lattice temperatures simultaneously for deep submicron ultrathin SOI NMOS devices with self-heating
6. Frequency dispersion in partially depleted SOI MOSFET output resistance
7. A small-signal model for the frequency-dependent drain admittance in floating-substrate MOSFET's