Low frequency noise in thin gate oxide MOSFETs

Microelectronics Reliability

Volumn 41, Issue 4, 2001, Pages 579-585

  Kolarova, R ^a,b   Skotnicki, T ^a,c   Chroboczek, J A ^a  

^a ORANGE LABS   (France)

^b BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRON TRANSITIONS; INVERSE PROBLEMS; OXIDES; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE; VOLTAGE CONTROL;

LOW FREQUENCY NOISES; THIN GATE OXIDES;

MOSFET DEVICES;

EID: 0035310696     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00248-1     Document Type: Article

References (11)

1. Experiments with gate oxide scaling from 4.5 nm down to 2.5 nm for boosting CMOS performances
2. A study of flicker noise in n- and p-MOSFETs with ultra-thin gate oxide in the direct-tunnelling regime
3. Improved analysis of low frequency noise in field effect MOS transistor
4. Critical MOSFETs operation for low voltage/low power ICs: Ideal characteristics, parameter extraction, electrical noise and RTS fluctuations
5. On possibilities of low frequency noise reduction in high mobility Si/Ge channel MOSFETs
6. Low frequency noise in SiGe-base heterojunction bipolar transistors and SiGe channel metal oxide semiconductor field effect transistors
7. 1/f noise and germanium surface properties
8. Flicker noise in deep submicron nMOS transistors
9. The relation between 1/f noise and the number of electrons
10. Reliability for ultra-thin oxides at low voltage
11. Ultra-thin gate dielecrics: They break down, but do they fail?