Hole confinement and its impact on low-frequency noise in SiGe pFETs on sapphire

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 815-818

  Mathew, Suraj J ^a   Niu, Guofu ^a   Dubbelday, Wadad B ^a   Cressler, John D ^a   Ott, John A ^a   Chu, Jack O ^a   Mooney, Patricia M ^a   Kavanagh, Karen L ^a   Meyerson, Bernard S ^a   Lagnado, Isaac ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HOLE CONFINEMENT; LOW FREQUENCY NOISE;

COMPUTER SIMULATION; SAPPHIRE; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

FIELD EFFECT TRANSISTORS;

EID: 84886447986     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)