Inversion layer quantization impact on the interpretation of 1/f noise in deep submicron CMOS transistors

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 79-82

  Mercha, A ^a   Simoen, E ^a   Richardson, G ^a   Claeys, C ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

SPECTRAL DENSITY;

ADJUSTABLE PARAMETERS; CMOS TRANSISTORS; DEEP SUBMICRON CMOS; FLAT-BAND VOLTAGE; INTERFACE OXIDE; NOISE SPECTRAL DENSITY; P CHANNEL DEVICE; WEAK INVERSIONS;

INVERSION LAYERS;

EID: 84907682727     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194875     Document Type: Conference Paper

References (11)

1. R.R. Siergiej, M.H. White, and N.S. Saks, "Theory and measurement of quantization effects on Si-SiO2 interface trap modeling", Solid-St. Electron., Vol. 35, 1992, pp. 843-854.
2. C.-Y. Hu, S. Banerjee, K. Sadra, B.G. Streetman, and R. Sivan, "Quantization effects in inversion layers of PMOSFET's on Si (100) substrates"" IEEE Electron Device Lett., Vol. 17, June 1996, pp. 276-278.
3. C. Moglestue, "Self-consistent calculation of electron and hole inversion layer charges at silicon-silicon dioxide interfaces", J. Appl. Phys., Vol. 59, May 1996, pp. 3175-3183.
4. A. Pacelli, S. Villa, A.L. Lacaita, and L.M. Perron, "Quantum effects on the extraction of MOS oxide traps by 1/f noise measurements", IEEE Trans. Electron Devices, Vol. 46, May 1999, pp. 1029-1035.
5. N.B. Lukyanchikova, M.V. Petrichuk, N.P. Garbar, E. Simoen, and C. Claeys, "Influence of the substrate voltage on the random telegraph signal parameters in submicron n-channel metal-oxide-semiconductor field-effect transistors under a constant inversion charge density", Appl. Phys. A, Vol. 70, 2000, pp. 345-353.
6. N. V. Amarasinghe, Z. Çelik-Butler, and A. Keshavarz, "Extraction of oxide trap properties using temperature dependence of random telegraph signals in submicron metaloxide- semiconductor field-effect transistors", J. Appl. Phys., Vol. 89, May 2001, pp. 5526-5532.
7. G. Ghibaudo, O. Roux, Ch. Nguyen-Duc, F. Balestra, and J. Brini, "Improved analysis of low frequency noise in field effect MOS transistors", Phys. Stat. Sol. (a), Vol. 124, 1991, pp. 571-581.
8. K.K. Hung, P.K. Ko, C. Hu, and Y.C. Cheng, "A unified model for the flicker noise in metal-oxide-semiconductor fieldeffect transistors", IEEE Trans. Electron Devices, Vol. 37, March 1990, pp. 654-665.
9. E.P. Vandamme and L.K.J. Vandamme, "Critical discussion on unified 1/f noise models for MOSFET's", IEEE Trans. Electron Devices, Vol. 47, Nov. 2000, pp. 2146-2152.
10. M.J. Knitel, P.H. Woerlee, A.J. Scholten, and A.T.A. Zegers-Van Duijnhoven, "Impact of process scaling on 1/f noise in advanced CMOS technologies", IEDM Tech. Dig., 2000, pp. 463-466.
11. S. Martin, G.P. Li, H. Guan, and S. D'Souza, "A BSIM3-based flat-band voltage perturbation model for RTS and 1/f noise", IEEE Electron Device Lett., Vol. 21, Jan. 2000, pp. 30-33.