Improvement of 1/f noise by using VHP (Vertical High Pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 119-120

  Kimijima, Hideki ^a   Ohguro, Tatsuya ^a   Evans, Bob ^a   Acker, Bruce ^a   Bloom, John ^a   Mabuchi, Hiroyuki ^a   Kwong, Dim Lee ^a   Morifuji, Eiji ^a   Yoshitomi, Takashi ^a   Sasaki Momose, Hisayo ^a   Kinugawa, Masaaki ^a   Katsumata, Yasuhiro ^a   Iwai, Hiroshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CMOS INTEGRATED CIRCUITS; DIELECTRIC FILMS; INTERFACES (MATERIALS); LOW TEMPERATURE OPERATIONS; NITROGEN; OXIDES; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE; TEMPERATURE DISTRIBUTION;

GATE DIELECTRICS; MIXED ANALOG DIGITAL CMOS; OXYNITRIDE; VERTICAL HIGH PRESSURE OXYNITRIDE GATE INSULATOR;

ELECTRIC INSULATORS;

EID: 0033280526     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)