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Journal of Applied Physics

Volumn 83, Issue 2, 1998, Pages 820-825

Constant-resistance deep-level transient spectroscopy in submicron metal-oxide-semiconductor field-effect transistors

(2) Kolev, Plamen V a Deen, M J a

a SIMON FRASER UNIVERSITY (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHARGE CARRIERS; ELECTRIC RESISTANCE MEASUREMENT; ELECTRON EMISSION; FERMI LEVEL; MOSFET DEVICES; TEMPERATURE; TRANSCONDUCTANCE;

SURFACE MOBILITY; TRAP CONCENTRATION;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 0031696456 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.366763 Document Type: Article

Times cited : (16)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.